170 central semiconductor corp. tm ^ sot-23 case description the central semiconductor CMPD2003, CMPD2003c, CMPD2003s, cmpd2004, cmpd2004c, and cmpd2004s types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. the following configurations are available: CMPD2003 single marking code: a82 CMPD2003c dual, common cathode marking code: c3c CMPD2003s dual, in series marking code: c3s cmpd2004 single marking code: d53 cmpd2004c dual, common cathode marking code: db7 cmpd2004s dual, in series marking code: db6 maximum ratings (t a =25c) CMPD2003 cmpd2004 CMPD2003c cmpd2004c symbol CMPD2003s cmpd2004s units continuous reverse voltage v r 200 240 v peak repetitivereverse voltage v rrm 250 300 v peak repetitive reverse current i o 200 200 ma continuous forward current i f 250 225 ma peak repetitive forward current i frm 625 625 ma forward surge current, tp=1 ms i fsm 4000 4000 ma forward surge current, tp=1 s i fsm 1000 1000 ma power dissipation p d 350 mw operating and storage junction temperature t j ,t stg -65 to +150 c thermal resistance q ja 357 c/w electrical characteristics (t a =25c unless otherwise noted) CMPD2003 cmpd2004 CMPD2003c cmpd2004c CMPD2003s cmpd2004s symbol test conditions min max min max unit bv r i r =100 m a 250 300 v i r v r =200v 100 - na CMPD2003 CMPD2003c CMPD2003s cmpd2004 cmpd2004c cmpd2004s surface mount high voltage switching diode ^ ^
171 i r v r =200v, t a =150c 100 - m a i r v r =240v - 100 na i r v r =240v, t a =150c - 100 m a v f i f =100ma 1.0 1.0 v v f i f =200ma 1.25 - v c t v r =0, f=1 mhz 5.0 5.0 pf t rr i f =i r =30ma, rec. to 3.0ma, r l =100 w 50 50 ns CMPD2003 cmpd2004 CMPD2003c cmpd2004c CMPD2003s cmpd2004s symbol test conditions min max min max unit 0$;,080 120,1$/ 0$;,080 120,1$/ all dimensions in inches (mm). $ & &$& && $ $ $ 1& CMPD2003 CMPD2003c CMPD2003s cmpd2004 cmpd2004c cmpd2004s r3 top view
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